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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only FOUR DIGIT LED DISPLAY(0.39Inch)
LFD415/62-XX/RP5
DATA SHEET
DOC. NO REV. DATE
: :
QW0905- LFD415/62-XX/RP5 B
: 15 - Mar - 2005
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/62-XX/RP5 Page 1/7
Package Dimensions
LFD415/62-XX/RP5 40.18(1.582") 7.0(0.276")
DIG.1
10.0 (0.39")
DP
DIG.2
DP1 DP2
DIG.3 DP3 DIG.4
12.8 (0.504")
10.16 (0.4")
1.2 CUSTOMER P/N LIGITEK
A
Blue mebrane
F E
G
B C
D
1/4 0.45 TYP
2.54X7=17.78 (0.7") 5.0 O 0.5
DP
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/62-XX/RP5 Page 2/7
Internal Circuit Diagram
LFD4152-XX/RP5 14 16 13 3 5 11 15 7
A B DIG. C D 1 E F G DP A B DIG. C D 2 E F G DP DP1
LFD4162-XX/RP5 14 16 13 3 5 11 15 7
A B DIG. C D 1 E F G DP A B DIG. C D 2 E F G DP DP1
1
1
2
2
12
4
12 3
4
DP2 A B DIG. C D 6 E F G DP
DP2 A B DIG. C D 6 E F G DP
3
9
DP3 10 A B DIG. C D 8 E F G DP
9 4
DP3 10 A B DIG. C D 8 E F G DP
4
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/62-XX/RP5 Page 3/7
Electrical Connection
PIN NO.
LFD4152-XX/RP5
PIN NO.
LFD4162-XX/RP5
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16.
Common Cathode Dig. 1 Common Cathode Dig. 2 Anode D Cathode DP1,DP2 Anode E Common Cathode Dig. 3 Anode DP Common Cathode Dig. 4 Anode DP3 Cathode DP3 Anode F Anode DP1,DP2 Anode C Anode A Anode G Anode B
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16.
Common Anode Dig. 1 Common Anode Dig. 2 Cathode D Anode DP1,DP2 Cathode E Common Anode Dig.3 3 Cathode DP Common Anode Dig.4 Cathode DP3 Anode DP3 Cathode F Cathode DP1,DP2 Cathode C Cathode A Cathode G Cathode B
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/62-XX/RP5 Page 4/7
Absolute Maximum Ratings at Ta=25 J
Ratings Parameter Symbol G Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Operating Temperature Storage Temperature IF IFP 30 120 mA mA UNIT
PD Ir Topr Tstg
100 10 -25 ~ +85 -25 ~ +85
mW
g A J J
Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 J
Part Selection And Application Information(Ratings at 25J )
Electrical
PART NO
common cathode Material Emitted or anode
CHIP Common Cathode
GaP Green
f P (nm)
f
(nm)
Min.
Vf(v)
Iv(mcd) Typ.
IV-M
Typ. Max. Min.
LFD4152-XX/RP5
565 Common Anode
30
1.7
2.1
2.6
1.75
3.5
2:1
LFD4162-XX/RP5
Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The luminous intensity data did not including O 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/62-XX/RP5 Page 5/7
Test Condition For Each Parameter
Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Peak Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio
Symbol Vf Iv
Unit volt mcd nm nm
Test Condition If=20mA If=10mA If=20mA If=20mA Vr=5V
f p f
Ir IV-M
g A
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/62-XX/RP5 Page 6/7
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
3.5
1000
Forward Current(mA)
100
Relative Intensity Normalize @20mA
1.0
3.0 2.5 2.0 1.5 1.0 0.5 0.0
10 1.0
0.1 2.0 3.0 4.0 5.0
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100
Relative Intensity@20mA Normalize @25J
Forward Voltage@20mA Normalize @25J
1.2
Ambient Temperature(J )
Ambient Temperature(J )
Fig.5 Relative Intensity vs. Wavelength
Fig.6 Directive Radiation
1.0
Relative Intensity @20mA
0.5
0.0 500 550 600 650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD415/62-XX/RP5 Page 7/7
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 JO5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 JO5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65 JO5J 2.RH=90 %~95% 3.t=240hrs O 2hrs
The purpose of this test is the resistance of the device under tropical for hous.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 JO5J &-40JO5J (10min) (10min) 2.total 10 cycles
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 JO5J 2.Dwell time= 10 O 1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 JO5J 2.Dwell time=5 O 1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2

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